Datasheet Details
- Part number
- MX0912B251Y
- Manufacturer
- Philips
- File Size
- 92.34 KB
- Datasheet
- MX0912B251Y_Philips.pdf
- Description
- NPN microwave power transistors
MX0912B251Y Description
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product speciļ¬cation Supersedes data of November 1994 1997 Feb 19 Phi.
olumns
c b
Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.
MX0912B251Y Features
* Interdigitated structure; high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry gives goo
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