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2SK3652 N-channel enhancement mode MOSFET

2SK3652 Description

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen.

2SK3652 Features

* Low on-resistance, low Qg
* High avalanche resistance

2SK3652 Applications

* For PDP
* For high-speed switching
* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability
* VDSS VGSS ID IDP EAS 230 ±30 50 200 2 200

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Datasheet Details

Part number
2SK3652
Manufacturer
Panasonic
File Size
213.66 KB
Datasheet
2SK3652-Panasonic.pdf
Description
N-channel enhancement mode MOSFET

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N-channel enhancement mode MOSFET Panasonic
Panasonic 2SK3652-like datasheet