2SK365 Datasheet - Toshiba Semiconductor

2SK365, N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap.

2SK365_ToshibaSemiconductor.pdf

2SK365 Datasheet Preview — Preview of 2SK365 PDF

Datasheet Details

Part number:

2SK365

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

178.72 KB

Description:

N-Channel MOSFET

Applications

* 2SK365 Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1.0 nA (max) (VGS =
* 30 V)
* Low RDS (ON): RDS (ON) = 80 Ω (typ. ) (IDSS = 5 mA)
* Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate curre

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2SK365 N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK365-like datasheet