2SK3653C MOSFET

NEC

Description

www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTE.
The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2SK3653C is.

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Datasheet Specifications

Part number: 2SK3653C
Manufacturer: NEC
File Size: 153.85 KB
Datasheet: 2SK3653C_NEC.pdf
Description: MOSFET

Features

* Low noise:
* 108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
* Containing a diode and high resistivity, short stability time is achieved during power-on.
* Super thin thickness package: 3pXSOF (0814) t = 0.37 mm TYP. 0.45 0.45 MAX. 0.4 1.4 ±0.1 0.2 +0.1

Applications

* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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2SK3653C MOSFET NEC

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