XP1E554 - Silicon NPN epitaxial planer transistor

Features

• 0.65 1 2 3 5 4 0.2 0.2±0.05 For high speed switching 1 Composite Transistors ton, toff Test Circuit 0.1µF Vout 220Ω Vin=10V 50Ω 3.3kΩ 3.3kΩ Vbb=.
• 3V 50Ω VCC=3V Vin=10V 50Ω XP1E554 tstg Test Circuit 0.1µF PT.
• Ta 200 Vout 1kΩ 90Ω Total power dissipation PT (mW) 910Ω 0.1µF 500Ω 500Ω Vbb=2V A 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 VCC=10V Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Wave form at A) Vout ton toff Ambient te.