XN4509 Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN4509, Silicon NPN epitaxial planer transistor

Composite Transistors XN4509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 0.65±0.15 6 0.95 2.8 0.3 +0.2 +0.25 1.5 0.05 0.65±0.15 1 0.3 0.05 2.9 0.05 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 q 2SC4561 × 2 elements 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Col

XN4509 Features

* 0.5

* 0.05 +0.1 +0.1 1 Composite Transistors PT

* Ta 240 120 Ta=25˚C XN4509 IC

* VCE 60 VCE=10V 50 25˚C Ta=75˚C 40

* 25˚C IC

* VBE Total power dissipation PT (mW) 200 100 Collector current IC (mA) 160 80 IB=300µA 250µA 200µA 150µA 100µA Collector