XN4506 Datasheet (Panasonic Semiconductor) - NPN epitaxial planer transistor

XN4506, NPN epitaxial planer transistor

Composite Transistors XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.65±0.15 6 0.95 2.8 0.3 +0.2 +0.25 1.5 0.05 0.65±0.15 1 0.3 0.05 2.9 0.05 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1915(F) × 2 elements 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating

XN4506 Features

* 0.5

* 0.05 +0.1 +0.1 Unit V µA µA 0.1 0.1 500 2500 0.1 0.6 80 7 1.0 V V MHz pF Ω Ron test circuit IB=1mA VB VV VA f=1kHz V=0.3V Ron= VB !1000(Ω) VA

* VB 1 Composite Transistors PT

* Ta 500 XN4506 IC

* VCE 24 Ta=25˚C 120 VCE=2V 100 25˚C IC

* VBE