XN4501 Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN4501, Silicon NPN epitaxial planer transistor

Composite Transistors XN4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 2.8 0.3 +0.2 +0.25 1.5 0.05 6 0.65±0.15 1 0.3 0.05 0.5 0.05 0.95 2.9 0.05 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD601A × 2 elements 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base volta

XN4501 Features

* +0.1 +0.1 1 Composite Transistors PT

* Ta 500 60 Ta=25˚C IB=160µA XN4501 IC

* VCE 1200 VCE=10V Ta=25˚C 1000 IB

* VBE Total power dissipation PT (mW) Collector current IC (mA) 400 50 40 120µA 100µA Base current IB (µA) 140µA 800 300 30 80µA 20 60µA 40µA 10 20µ