OH10003 GaAs Hall Device

Panasonic Semiconductor

Description

GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor I .

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Datasheet Specifications

Part number: OH10003
Manufacturer: Panasonic Semiconductor
File Size: 48.74 KB
Datasheet: OH10003_PanasonicSemiconductor.pdf
Description: GaAs Hall Device

Features

* Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
* Input resistance: typ. 0.85 kΩ
* Satisfactory linearity of GaAs hall voltage with respect to the magnetic field
* Small temperature coefficient of the hall voltage: β ≤
* 0.06%/°C
* Sealed in the Mini

Applications

* 0.16
* 0.06 + 0.2 + 0.1 0.4
* 0.05 + 0.1 1 OH10003 PD  T a 200 180 GaAs Hall Devices VH  Ta 240 B = 1 kG IC = 6 mA 200 1 600 1 400 RIN  Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 Input resistance RIN (Ω)
* 40 Hall voltage VH (mV) 1 200

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OH10003 GaAs Hall Device Panasonic Semiconductor

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