LNA2W01L - GaAs Infrared Light Emitting Diode

Name: LNA2W01L
SKU: LNA2W01L-60227

Panasonic Semiconductor

The LNA2W01L by Panasonic Semiconductor is a GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LNA2W01L
Manufacturer	Panasonic Semiconductor
File Size	44.34 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LNA2W01L_PanasonicSemiconductor.pdf
Additional preview pages of the LNA2W01L datasheet.

High-power output, high-efficiency : PO = 4.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) 1.05±0.1 1 0.5±0.1 Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Narrow directivity : θ = 18 deg. (typ. ) Ultra-miniature double ended package 2.8±0.2 R0.9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forwa.

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Published: Mar 22, 2005 |