LNA2601L - GaAs Infrared Light Emitting Diode

Name: LNA2601L
SKU: LNA2601L-60217

Panasonic Semiconductor

The LNA2601L by Panasonic Semiconductor is a GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LNA2601L
Manufacturer	Panasonic Semiconductor
File Size	41.84 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LNA2601L_PanasonicSemiconductor.pdf
Additional preview pages of the LNA2601L datasheet.

High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 12 min. Not Soldered 2.15 max. 2-0.5±0.15 0.3±0.15 2 2.54 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.

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Published: Mar 22, 2005 |