LNA2606L - GaAlAs on GaAs Infrared Light Emitting Diode

Name: LNA2606L
SKU: LNA2606L-60219

Panasonic Semiconductor

The LNA2606L by Panasonic Semiconductor is a GaAlAs on GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LNA2606L
Manufacturer	Panasonic Semiconductor
File Size	21.54 KB
Description	GaAlAs on GaAs Infrared Light Emitting Diode
Datasheet	LNA2606L_PanasonicSemiconductor.pdf
Additional preview pages of the LNA2606L datasheet.

High-power output, high-efficiency: PO = 9 mW min.
Emitted light spectrum suited for silicon photodetectors.
Ultra-miniature, thin side-view type package.
Long lifetime, high reliability 1.95±0.25 3.0±0.3 0.8 φ1.1 R0.5 1.4±0.2 0.9 0.5 3.5±0.3 12 min. 2.4 1.1 Not soldered 2.15 max. 1.1 2.
0.5±0.15 0.3±0.15 s Absolute Maximum Ratings Ta = 25°C Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating.

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Published: Mar 22, 2005 |