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PJP75N06 - 60V N-Channel MOSFET

Features

  • RDS(ON), VGS@10V,IDS@30A=13mΩ.
  • RDS(ON), VGS@4.5V,IDS@30A=18mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for Converters and Power Motor Controls.
  • Fully Characterized Avalanche Voltage and Current.
  • Pb free product : 99% Sn above can meet RoHS environment substance directive request.

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www.DataSheet4U.com PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-220 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : P75N06 Drain PIN Assignment Gate 1. Gate 2. Drain 3.
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