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PJP75N75 - 75V N-Channel MOSFET

Features

  • RDS(ON), VGS@10V,IDS@30A=11mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for Converters and Power Motor Controls.
  • Fully Characterized Avalanche Voltage and Current.
  • In compliance with EU RoHS 2002/95/EC directives.

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Full PDF Text Transcription

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PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: TO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : P75N75 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS +20 Continuous Drain Current ID 7 5 Pulsed Drain Current 1) ID M Maximum Power Dissipation TA =25OC TA =75OC PD Op e ra ti ng J unc ti o n a nd S t
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