2N7002K - N-channel MOSFET

Pan Jit International

Datasheet Details

RDS(ON), VGS@10V,IDS@500mA=3Ω.
RDS(ON), VGS@4.5V,IDS@200mA=4Ω.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
Very Low Leakage Current In Off Condition.
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM.
In compliance with EU RoHS 2002/95/EC directives.

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Published: May 28, 2015 |