2N7002KDW - N-Channel MOSFET

Pan Jit International

Datasheet Details

Part number	2N7002KDW
Manufacturer	Pan Jit International
File Size	179.33 KB
Description	N-Channel MOSFET
Datasheet	2N7002KDW-PanJitInternational.pdf

RDS(ON), VGS@10V,IDS@500mA=3Ω.
RDS(ON), VGS@4.5V,IDS@200mA=4Ω.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
Very Low Leakage Current In Off Condition.
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM.
Component are in compliance with EU RoHS 2002/95/EC directives.

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Published: Feb 8, 2017 |