2N7002KW - N-channel MOSFET

Pan Jit International

Datasheet Details

Part number	2N7002KW
Manufacturer	Pan Jit International
File Size	167.09 KB
Description	N-channel MOSFET
Datasheet	2N7002KW-PanJitInternational.pdf

RDS(ON), VGS@10V,IDS@500mA=3Ω.
RDS(ON), VGS@4.5V,IDS@200mA=4Ω.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
Very Low Leakage Current In Off Condition.
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM.
Component are in compliance with EU RoHS 2002/95/EC directives.

📁 2N7002KW Similar Datasheet

Other Datasheets by Pan Jit International

Published: Dec 18, 2016 |