NGTB05N60R2DT4G IGBT

ON Semiconductor

NGTB05N60R2DT4G Description

NGTB05N60R2DT4G IGBT 600V, 8A, N-Channel www.onsemi.com .

NGTB05N60R2DT4G Features

* Reverse Conducting II IGBT
* IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]
* IGBT tf=95ns (typ)
* Diode VF=1.5V (typ) [IF=5A]
* Diode trr=70ns (typ)

NGTB05N60R2DT4G Applications

* General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax

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Datasheet Details

Part number: NGTB05N60R2DT4G
Manufacturer: ON Semiconductor ↗
File Size: 576.53 KB
Datasheet: NGTB05N60R2DT4G-ONSemiconductor.pdf
Description: IGBT

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