NGTB03N60R2DT4G IGBT

ON Semiconductor

NGTB03N60R2DT4G Description

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel .

NGTB03N60R2DT4G Features

* Reverse Conducting II IGBT
* IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]
* IGBT tf=75ns (typ)
* Diode VF=1.5V (typ) [IF=3A]
* Diode trr=65ns (typ)

NGTB03N60R2DT4G Applications

* General Purpose Inverter Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25C
* 2 @Tc=100C
* 2 Collector Current (Peak) Pulse width Llimited b

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Datasheet Details

Part number: NGTB03N60R2DT4G
Manufacturer: ON Semiconductor ↗
File Size: 593.15 KB
Datasheet: NGTB03N60R2DT4G-ONSemiconductor.pdf
Description: IGBT

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