NGTB10N60R2DT4G IGBT

ON Semiconductor

NGTB10N60R2DT4G Description

NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel www.onsemi.com .

NGTB10N60R2DT4G Features

* Reverse Conducting II IGBT
* IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]
* IGBT tf=65ns (typ)
* Diode VF=1.5V (typ) [IF=10A]
* Diode trr=90ns (typ)

NGTB10N60R2DT4G Applications

* General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax

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Datasheet Details

Part number: NGTB10N60R2DT4G
Manufacturer: ON Semiconductor ↗
File Size: 580.80 KB
Datasheet: NGTB10N60R2DT4G-ONSemiconductor.pdf
Description: IGBT

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