NDT3055 N-Channel Enhancement Mode Field Effect Transistor

ON Semiconductor

Description

N-Channel Enhancement Mode Field Effect Transistor NDT3055 General .
These N. Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDT3055
Manufacturer: ON Semiconductor ↗
File Size: 196.06 KB
Datasheet: NDT3055-ONSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 4 A, 60 V
* RDS(ON) = 0.100 W @ VGS = 10 V
* High Density Cell Design for Extremely Low RDS(ON)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* This is a Pb
* Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unles

Applications

* such as DC motor control and DC/DC conversion where fast switching, low in

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NDT3055 N-Channel Enhancement Mode Field Effect Transistor ON Semiconductor

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