NDT3055 - N-Channel Enhancement Mode Field Effect Transistor

ON Semiconductor

NDT3055 Datasheet Preview — Preview of NDT3055 PDF

Datasheet Details

Part number	NDT3055
Manufacturer	ON Semiconductor ↗
File Size	196.06 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT3055-ONSemiconductor.pdf

NDT3055 Product details

Description

These N Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance and provide superior switching performance. line power loss, and resistance to transients are needed.

Features

4 A, 60 V.
RDS(ON) = 0.100 W @ VGS = 10 V.
High Density Cell Design for Extremely Low RDS(ON).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
This is a Pb.
Free Device.

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Published: Oct 13, 2024 |