NDT410EL N-Channel MOSFET

Fairchild

Description

August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te.

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Datasheet Specifications

Part number: NDT410EL
Manufacturer: Fairchild
File Size: 228.26 KB
Datasheet: NDT410EL_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D D G D S G S ABSOLUTE MA

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NDT410EL N-Channel MOSFET Fairchild

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