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NDT410EL N-Channel MOSFET

NDT410EL Description

August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te.

NDT410EL Features

* 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D D G D S G S ABSOLUTE MA

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N-Channel MOSFET Fairchild
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