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NDT2955 P-Channel MOSFET

NDT2955 Description

September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General .
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDT2955 Features

* -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G

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P-Channel MOSFET Fairchild
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