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NDT3055 N-Channel MOSFET

NDT3055 Description

May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDT3055 Features

* 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D G SOT-223 G D S S SOT-223
* (J23Z)

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N-Channel MOSFET Fairchild
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