MTB60N06HD Datasheet (ON Semiconductor)

MTB60N06HD, Power MOSFET

MTB60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

The energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe

MTB60N06HD Features

* load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 VDS = 0 V Ciss 4000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 3000 Crss 2000 Ciss Coss 1000 Crss 0 10 5 0 5 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN