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MTB60A06DH8 - Dual N-Channel Enhancement Mode Power MOSFET

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Cystech Electonics

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MTB60A06DH8 Dual N-Channel Enhancement Mode Power MOSFET by Cystech Electonics - Datasheet Preview — Datasheet preview – MTB60A06DH8

Datasheet Details

Part number	MTB60A06DH8
Manufacturer	Cystech Electonics
File Size	639.65 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB60A06DH8 Datasheet
Additional preview pages of the MTB60A06DH8 datasheet.

Product details

Features

Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A.
Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=5A.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package 60V 15A 9.5A 4.5A 3.6A 34mΩ(typ) 38mΩ(typ) Equivalent Circuit MTB60A06DH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB60A06DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package.

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Published: Nov 27, 2016 |