MTB6N60E1 Datasheet (ON Semiconductor)

MTB6N60E1, High Energy Power FET

MTB6N60E1 TMOS E FET.™ High Energy Power FET D2PAK SL Straight Lead N Channel Enhancement Mode Silicon Gate http://onsemi.com This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, thes

MTB6N60E1 Features

* duces switching losses. 3200 VDS = 0 V VGS = 0 V Ciss 2400 TJ = 25°C 10000 TJ = 25°C VGS = 0 V 1000 Ciss C, CAPACITANCE (pF) C, CAPACITANCE (pF) 1600 Crss Ciss 800 Coss 0 10 5 Crss 05 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS)