MJE200G - Complementary Silicon Power Plastic Transistors

onsemi

Features

High DC Current Gain.
Low Collector.
Emitter Saturation Voltage.
High Current.
Gain.
Bandwidth Product.
Annular Construction for Low Leakage.
These Devices are Pb.
Free and are RoHS Compliant.

MJE200G complementary silicon power plastic transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	MJE200G
Manufacturer	onsemi
File Size	208.22 KB
Description	Complementary Silicon Power Plastic Transistors
Datasheet	MJE200G Datasheet

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Complementary Silicon Power Plastic Transistors MJE200G (NPN), MJE210G (PNP) These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Symbol Rating Value Unit VCEO VCB VEB IC ICM IB PD Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C 40 Vdc 25 Vdc 8.0 Vdc 5.0 Adc 10 Adc 1.0 Adc 15 W 0.12 mW/_C PD Total Power Dissipation @ TC = 25_C Derate above 25_C 1.5 0.