FDMC86340ET80 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDMC86340ET80
Manufacturer	ON Semiconductor
File Size	522.44 KB
Description	N-Channel MOSFET
Datasheet	FDMC86340ET80 Datasheet
Additional preview pages of the FDMC86340ET80 datasheet.

Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for the on state resistance and yet maintain superior switching performance.

Features

Extended TJ Rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A.
Max rDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A.
High Performance Technology for Extremely Low rDS(on).
Termination is Lead.
free.
RoHS Compliant.

📁 Similar Datasheet

FDMC86340 - MOSFET (Fairchild Semiconductor)
FDMC86320 - MOSFET (Fairchild Semiconductor)
FDMC86324 - N-Channel Power Trench MOSFET (Fairchild Semiconductor)
FDMC86012 - MOSFET (Fairchild Semiconductor)
FDMC86102 - N-Channel Power Trench MOSFET (Fairchild Semiconductor)
FDMC86102L - MOSFET (Fairchild Semiconductor)
FDMC86102LZ - N-Channel Power Trench MOSFET (Fairchild Semiconductor)
FDMC86106LZ - N-Channel Power Trench MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDMC86116LZ - N-Channel Power MOSFET
FDMC86116LZ-L701 - N-Channel Power MOSFET
FDMC86139P - P-Channel MOSFET
FDMC86160 - N-Channel MOSFET
FDMC86160ET100 - N-Channel MOSFET
FDMC86183 - N-Channel MOSFET

Published: Dec 19, 2023 |