FDMC86324 - N-Channel Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC86324
Manufacturer	Fairchild Semiconductor
File Size	376.86 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC86324 Datasheet
Additional preview pages of the FDMC86324 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package

Features

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A.
Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4 A.
Low Profile - 1 mm max in Power 33.
100% UIL Tested.
RoHS Compliant General.

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Published: Sep 9, 2013 |