FDC3601N - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDC3601N
Manufacturer	ON Semiconductor
File Size	328.55 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC3601N-ONSemiconductor.pdf

FDC3601N Product details

Description

These N Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance. 8 and TSSOP 8 packages are impractical.

Features

1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V.
Low Gate Charge (3.7 nC Typical).
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
6 Package: Small Footprint 72% (Smaller than Standard SO.
8); Low Profile (1 mm Thick).
This is a Pb.
Free Device.

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Published: Dec 21, 2023 |