FDC365P - P-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC365P
Manufacturer	Fairchild Semiconductor
File Size	234.97 KB
Description	P-Channel PowerTrench MOSFET
Datasheet	FDC365P-FairchildSemiconductor.pdf

FDC365P Product details

Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Inverter Power Supplies S D D Pin 1 D D SuperSOTTM -6 G D1 D2 G3 6D 5D 4S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed

Features

Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A.
Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A.
RoHS Compliant November 2007 tm General.

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Published: Dec 27, 2014 |