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FCH130N60 - N-Channel MOSFET

Description

SUPERFET® II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 112 mW.
  • Ultra Low Gate Charge (Typ. Qg = 54 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 240 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FCH130N60
Manufacturer onsemi
File Size 361.14 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH130N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, SUPERFET II 600 V, 28 A, 130 mW FCH130N60 Description SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 mW • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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