2SD1062 - PNP / NPN Epitaxial Planar Silicon Transistors

ON Semiconductor

Datasheet Details

Part number	2SD1062
Manufacturer	ON Semiconductor
File Size	92.38 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD1062-ONSemiconductor.pdf

Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max.
Wide ASO leading to high resistance to breakdown. Specifications ( ) : 2SB826 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=.

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Published: Sep 17, 2016 |