2SB817C - Bipolar Transistor

ON Semiconductor

Datasheet Details

Large current capacitance.
Wide SOA and high durability against breakdown.
Adoption of MBIT process Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings -160 -140 --6 --12 --20 2.5 120 150 --55 to +1.

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Published: May 5, 2014 |