Datasheet Details
| Part number | 2SB812 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 216.03 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB812-INCHANGE.pdf
|
| Part number | 2SB812 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 216.03 KB |
| Description | PNP Transistor |
| Datasheet |
2SB812-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) High Power Dissipation Complement to Type 2SD1032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IC
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