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2SB825 - PNP Transistor

Description

High Collector Current:: IC= -7A Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A Wide Area of Safe Operation Complement to Type 2SD1061 APPLICATIONS

speed inverter and converter.

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isc Silicon PNP Power Transistor 2SB825 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving, high speed inverter and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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