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2SB1122 - Bipolar Transistor

ON Semiconductor

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Datasheet Details

Part number	2SB1122
Manufacturer	ON Semiconductor
File Size	163.71 KB
Description	Bipolar Transistor
Datasheet	2SB1122-ONSemiconductor.pdf

2SB1122 Product details

Features

Adoption of FBET process.
Ultrasmall size making it easy to provide high-density hybrid IC’s Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Conditions Ratings Unit --60 V --50 V --5 V --1 A --2 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are st.

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Published: May 31, 2015 |