2SA2039 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET and MBIT processes Low collector-to-emitter saturation voltage.
Large current capacitance High-speed switching.
High allowable power dissipation Speciﬁcations ( ): 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCES VCEO VEBO IC ICP Conditions Ratings (--50)10.

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Published: Nov 25, 2013 |