2SA2034 - Silicon PNP Transistor

Toshiba

Datasheet Details

(1) High collector voltage: VCEO = -400 V (min) (2) High-speed switching: tf = 0.3 µs (max) (IC = -1.0 A) 3. Packaging and Internal Circuit 2SA2034 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 Emitter-base voltage VEBO -7 Collector current (DC) (Note 1) IC -2 A Collector current (.

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Published: Nov 25, 2013 |