Si2319 - P-Channel Enhancement MOSFET

The Si2319 by Nanxin is a P-Channel Enhancement MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	Si2319
Manufacturer	Nanxin
File Size	513.88 KB
Description	P-Channel Enhancement MOSFET
Datasheet	Si2319-Nanxin.pdf
Additional preview pages of the Si2319 datasheet.

Low On resistance.
-4.5V drive.
RoHS compliant. Si2319 P-Channel Enhancement MOSFET Si2319 Halogen-Free Product Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic.

📁 Si2319 Similar Datasheet

Other Datasheets by Nanxin

Published: Nov 28, 2018 |