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Si2319DS
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−40
FEATURES
D TrenchFETr Power MOSFET ID (A)b
rDS(on) (W)
0.082 @ VGS = −10 V 0.130 @ VGS = −4.5 V
APPLICATIONS
D Load Switch
−3.0 −2.4
TO-236 (SOT-23)
G
1 3 D Ordering Information: Si2319DS-T1 Si2319DS-T1—E3 (Lead Free)
S
2
Top View Si2319DS (C9)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 sec
−40 "20 −3.0 −2.4 −12 −1.0 1.25 0.8
Steady State
Unit
V
−2.3 −1.85 A
−0.
Si2319DS Datasheet
