SI2312 - 20V N-Channel MOSFET

JinYu

Datasheet Details

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SI2312 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pu.

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Published: Nov 27, 2018 |