PTB23003X - NPN microwave power transistor

NXP

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Datasheet Details

Part number	PTB23003X
Manufacturer	NXP
File Size	58.98 KB
Description	NPN microwave power transistor
Datasheet	PTB23003X_PhilipsSemiconductors.pdf

PTB23003X Product details

Description

olumns 1 c b e MAM131 DESCRIPTION Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.Marking code: 2303X.Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit.MODE OF OPERATION CW f (GHz) 2 VCC (V) 24 PL (W) ≥3 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.The produ

Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.

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Published: Apr 16, 2005 |