Click to expand full text
e
PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor
Description
The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
4 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
12
Output Power (Watts)
10 8 6 4 2 0 0.00
200 06
LOT COD E
VCC = 25 V ICQ = 50 A f = 900 MHz
0.15 0.30 0.45 0.60 0.
PTB20006 Datasheet
