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PTB23006U - Microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier.

Features

  • Very high power gain.
  • Diffused emitter ballasting resistors improve ruggedness.
  • Interdigitated emitter-base structure.
  • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life.
  • Multicell geometry improves power sharing and reduces thermal resistance.
  • Internal input prematching network.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and reduces thermal resistance • Internal input prematching network. APPLICATIONS Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz.
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