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PHX8ND50E - PowerMOS transistors FREDFET/ Avalanche energy rated

Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Isolated package.
  • Fast reverse recovery diode PHX8ND50E SYMBOL d QUICK.

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Datasheet Details

Part number PHX8ND50E
Manufacturer NXP Semiconductors
File Size 61.77 KB
Description PowerMOS transistors FREDFET/ Avalanche energy rated
Datasheet download datasheet PHX8ND50E Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package • Fast reverse recovery diode PHX8ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 4.2 A g RDS(ON) ≤ 0.85 Ω s trr = 180 ns SOT186A GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHX8ND50E is supplied in the SOT186A full pack, isolated package.
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