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BUK661R6-30C - N-channel TrenchMOS intermediate level FET

BUK661R6-30C Description

BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev.01 * 6 September 2010 Product data sheet 1.Product profile 1.1 General desc.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK661R6-30C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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Datasheet Details

Part number
BUK661R6-30C
Manufacturer
NXP ↗
File Size
163.22 KB
Datasheet
BUK661R6-30C-NXP.pdf
Description
N-channel TrenchMOS intermediate level FET

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N-channel TrenchMOS intermediate level FET NXP
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