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BUK6607-75C - N-channel TrenchMOS FET

NXP Semiconductors

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Datasheet Details

Part number	BUK6607-75C
Manufacturer	NXP Semiconductors
File Size	358.53 KB
Description	N-channel TrenchMOS FET
Datasheet	BUK6607-75C-NXPSemiconductors.pdf

BUK6607-75C Product details

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

Features

AEC Q101 compliant.
Suitable for intermediate level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Published: Aug 22, 2014 |