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BUK661R8-30C - N-channel TrenchMOS intermediate level FET

NXP

The BUK661R8-30C by NXP is a N-channel TrenchMOS intermediate level FET. Below is the official datasheet preview.

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BUK661R8-30C N-channel TrenchMOS intermediate level FET by NXP - Datasheet Preview — Official preview page of the BUK661R8-30C N-channel TrenchMOS intermediate level FET datasheet (NXP).

Datasheet Details

Part number	BUK661R8-30C
Manufacturer	NXP
File Size	172.99 KB
Description	N-channel TrenchMOS intermediate level FET
Datasheet	BUK661R8-30C-NXP.pdf
Additional preview pages of the BUK661R8-30C datasheet.

BUK661R8-30C Product details

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

Features

AEC Q101 compliant.
Suitable for standard and logic level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Published: Feb 3, 2016 |